Yazar "Durmus, Perihan" seçeneğine göre listele

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  • Küçük Resim
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    Distribution of interface traps in Au/2% GC-doped Ca3Co4Ga0.001Ox/n-Si structures
    (Wiley, 2020) Eroglu, Ayse Gul; Yildirim, Mert; Durmus, Perihan; Dokme, Ibilge
    This study presents voltage-dependent profile of interface traps in Au/n-Si structure with 2% graphene-cobalt-doped Ca3Co4Ga0.001Ox interfacial layer. Admittance measurements revealed capacitance-voltage (C-V) plots with typical regions of a metal-insulator-semiconductor structure through inversion, depletion, and accumulation regions. Frequency dispersion is observed in C-V plots and such behavior was explained with excess capacitance, which is associated with the density of interface traps (D-it) in the structure because larger D-it is observed when the measurements are held at low frequencies due to the fact that traps can follow the signal depending on their lifetime. D-it was also obtained using conductance method, which also provided lifetime of the traps. The difference between the values of D-it was attributed to the difference in extraction methods. Obtained results showed that Au/2% graphene-cobalt-doped Ca3Co4Ga0.001Ox/n-Si structure yields promising electrical characteristics when the structure is operated at high frequencies. (c) 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019, 136, 48399.
  • Küçük Resim
    Öğe
    The origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n-GaAs contacts at low temperatures (T <= 300 K)
    (Natl Inst Optoelectronics, 2020) Dokme, Ilbilge; Yeriskin, Seckin Altindal; Yildirim, Mert; Durmus, Perihan
    Au/n-GaAs contacts were fabricated using n-GaAs wafer with high doping concentration and their electrical characteristics were investigated via admittance measurements at low temperatures (T <= 300 K) at 1MHz. The main electronic parameters such as barrier height, depletion region width, doping concentration, series resistance and Fermi energy were obtained from experimental data. All these parameters showed dependence on temperature since different conduction mechanisms may play role at a certain voltage and temperature range. The forward bias capacitance-voltage curve exhibited an anomalous peak and then capacitance took negative values for each temperature. Such negative capacitance behaviour can be explained by the loss of interface charges located at junction, the existence of surface states, series resistance and a native interlayer. The decrease in series resistance and increase in surface states with increasing temperature were attributed to the decrease in band gap of GaAs and restructuring and reordering of surface charges.