Yazar "Demir, Gulcin Ersoz" seçeneğine göre listele

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    DETERMINATION OF MAIN ELECTRICAL PARAMETERS OF Au-4H-n-SiC (MS) AND Au-Al2O3-4H-n-SiC (MIS) DEVICES
    (World Scientific Publ Co Pte Ltd, 2021) Demir, Gulcin Ersoz; Yucedag, Ibrahim
    In this study, Au-4H-n-SiC metal-semiconductor (MS) and Au-Al2O3-4H-n-SiC metal-insulator-semiconductor (MIS) devices were fabricated to examine the effects on the performance of electronic devices of interfacial insulating materials. In order to determine the dielectric properties, capacitance/conductance-voltage (C/G-V) measurements were realized in a wide range of voltages (-3.0 V)-(11.0 V). Current-voltage (I-V) measurements to obtain the electric properties were realized at +/- 2:5V. Moreover, both the energy distributions of surface states (N-ss) and series resistance (R-s) were obtained from the C/G-V data. Obtained results provided that series resistance originating from interfacial layer (Al2O3) was more effective on the I-V and C/G-V characteristics which must be taken into account in the calculation of main electrical parameters. The rectification ratio (RR) and shunt resistance (R-sh) of the MIS device were almost 10(3) times greater than those of the MS structure. Using Al2O3 between Au and 4H-n-SiC also led to an increase in the value of barrier height (BH) and a decrease in the value of ideality factor (n). These results confirmed that Al2O3 layer leads to an increase in the performance of MS device with respect to low values of N-ss, reverse saturation current (I-0) and n and high values of RR, R-sh and BH.
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    Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures
    (Elsevier, 2021) Azizian-Kalandaragh, Yashar; Yucedag, Ibrahim; Demir, Gulcin Ersoz; Altindal, Semsettin
    In this study, the effect of frequency and voltage on the dielectric properties of Al/(CdS-PVA)/p-Si structures prepared using cadmium sulfide (CdS)-polivinyl alcohol (PVA) interface material was investigated. For this purpose, real and imaginary permittivity (epsilon' and epsilon ''), dissipation factor (tan delta), ac electrical conduction mechanism (sigma(ac)), real and imaginary part of electric modulus (M' and M) were obtained by using capacitance-conductance (C-G/omega) measurements at frequency between 5kHz - 5MHz and at voltage between (-1V) - (+1V). All parameters were found to depend considerably on the frequency and voltage. epsilon' and epsilon '' reach higher values at low frequencies due to surface states (N-ss) which can easily monitor ac signal, dipolar polarization and interfacial polarization. Short-range mobility of charge carriers caused the increase of both electrical modulus and sigma(ac) with increasing frequency. Moreover, M '' exhibited a peak behavior which shifts to higher frequency with increasing voltage. Peak behavior could be ascribed to both decrease in polarization and surface states. (C) 2020 Elsevier B.V. All rights reserved.