Yazar "Al-Ghamdi, Ahmed A." seçeneğine göre listele

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    Effect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodes
    (Elsevier, 2023) Ocaya, Richard O.; Al-Sehemi, Abdullah G.; Tataroglu, Adem; Dere, Aysegul; Erol, Ibrahim; Aksu, Mecit; Al-Ghamdi, Ahmed A.
    This study investigates the fabrication and performance analysis of Al/CuO:LaB6/p-Si/Al diodes with CuO-doped LaB6 interlayer films of varying concentrations (1%, 5%, and 10%). Experimental evidence demonstrates the limitations of 0% CuO doping, as pure LaB6 lacks a significant barrier height, resulting in ohmic behavior unsuitable for intended applications. Through comprehensive analyses under varying illuminations (20-100 mW/cm2) and frequencies (10 kHz-1 MHz), the study reveals that controlling CuO doping in LaB6 significantly enhances the effective barrier height at the LaB6:CuO heterojunction, improving rectification properties. This enhancement enables the diode to be well-suited for high-speed photonic devices utilizing one-step photoemission. The findings contribute to the development of high-performance LaB6-based devices, advancing photonic technologies by emphasizing the advantages of CuO doping.
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    Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites
    (Elsevier Science Sa, 2024) Yalcin, Mesut; Al-Sehemi, Abdullah G.; Erol, Ibrahim; Aksu, Mecit; Tillayev, Sanjar; Dere, Aysegul; Al-Ghamdi, Ahmed A.
    GO-doped LaB6 nanocomposite-based Al/p-Si/GO:LaB6/Al photodiodes were fabricated for the study. The electrical properties of the fabricated photodiodes were subjected to current-voltage and capacitance-voltage measurements. The ideality factors, barrier heights and series resistance values of photodiodes were calculated and compared using the Cheung-Cheung and Norde methods approaches. The lowest ideality factor values were calculated to be 4.75, 4.00 and 9.21 in the samples doped with GO at 1 %, 5 % and 10 %, respectively, and the highest barrier height values were calculated from the Norde function to be 0.75, 0.64 and 0.75 eV, respectively Additionally, the responsivity (R) and detectivity (D) values of the diodes were calculated. The R values of 1 %, 3 % and % 5 doped diodes were calculated as 2153, 6001 and 2042 mA/W at, 100 mW/cm(2), respectively. The D* values of 1 %, 3 % and % 5 doped diodes are calculated as 1.38 x 10(11), 3.85 x 10(11) and 1.31 x 10(11) Jones at 100 mW/cm(2), respectively. The interface state (Nss) of 1 %, 3 % and % 5 doped diodes were calculated as 2 x 10(13), 1.25 x 10(13) and 1.06 x 10(13)eV(-1) cm(-2), at 100 mW/cm(2), respectively. It can be concluded that the diodes produced in this study have potential for use in optoelectronic applications.