Kaya, AhmetYücedağ, İbrahimTecimer, HüseyinAltındal, Şemsettin2020-04-302020-04-3020141369-80011873-4081https://doi.org/10.1016/j.mssp.2014.03.015https://hdl.handle.net/20.500.12684/2320International Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEY/0000-0002-8211-8736WOS: 000345645000005In this study, Al/p-Si structures with undoped and Co-doped PVA interfacial layer called S-1 and S-2 were fabricated and their both electrical and dielectric properties were compared by using 300 kHz capacitance voltage (C-V) and conductance voltage (G/omega-V) measurements at room temperature. Experimental results show that both C and G or dielectric constant (epsilon'), dielectric loss (epsilon '') values were found as strongly function of applied bias voltage especially at inverse and accumulation bias regions. It was found that the value of R-5 considerably decreases with doping Co metal contrary to conductivity especially in the forward bias region. Such behavior can be attributed to the lack of free charges in pure PVA. The imaginary parr of dielectric modulus (M '') gives Two peaks for S-1 corresponding To enough reverse and forward biases and passes from a minimum at about zero bias. Also, it is clear That the minimum of The M '' for S-2 coincides with The maximum of The for S-1 at zero bias. As a result, Co-doped PVA considerable improved The performance of structure. In addition, loss Tangent. (tan delta), ac conductivity (sigma(ac)) and real part. of The electric modulus (M') were obtained and compared each other. (C) 2014 Elsevier Ltd. All rights reserved,en10.1016/j.mssp.2014.03.015info:eu-repo/semantics/closedAccessComparing Al/PVA/p-Si and AhCo-PVA/p-Si structuresElectric and dielectric propertiesVoltage dependentElectric modulusAc conductivityArticle282630WOS:000345645000005Q1Q2