Gökçen, MuharremTunç, Tuncay2020-05-012020-05-0120131546-542X1744-7402https://doi.org/10.1111/ijac.12009https://hdl.handle.net/20.500.12684/6240Gokcen, Muharrem/0000-0001-9063-3028; Tunc, Tuncay/0000-0002-3576-2633; Fen Bilgisi Egitimi, Aksaray Egitim/0000-0001-8976-571XWOS: 000323828700008Dielectric characteristics such as dielectric constant (epsilon), dielectric loss (epsilon), dielectric loss tangent (tan) and real and imaginary parts of electrical modulus (M and M), and ac electrical conductivity (sigma(ac)) of Au/ Polyvinyl Alcohol (PVA) (Bi2O3-dispersed)/n-Si structures have been investigated by using admittance measurements. Results show that the epsilon values of Au/PVA/n-Si with Bi2O3-dispersed PVA interfacial layer are very higher compared with those with pure and other dopant/mixture's of PVA. Thus, PVA is made very compatible for device applications with the enhanced dielectric properties by Bi2O3 disperse and its native very high dielectric strength.en10.1111/ijac.12009info:eu-repo/semantics/closedAccessArticle10E64E69WOS:000323828700008Q2Q2