Yıldız, Dilber EsraYıldırım, MertGökçen, Muharrem2020-04-302020-04-3020140734-21011520-8559https://doi.org/10.1116/1.4870593https://hdl.handle.net/20.500.12684/3493YILDIRIM, Mert/0000-0002-8526-1802; Gokcen, Muharrem/0000-0001-9063-3028; Yildiz, Dilber Esra/0000-0003-2212-199XWOS: 000335965300024Al/Al2O3/p-Si Schottky barrier diodes (SBDs) were fabricated using atomic layer deposition technique in order to investigate dielectric properties of SBDs. For this purpose, admittance measurements were conducted at room temperature between -1V and 3V in the frequency range of 10 kHz and 1MHz. In addition to the investigation of Al2O3 morphology using atomic force microscope, dielectric parameters; such as dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta), and real and imaginary parts of dielectric modulus (M' and M '', respectively), were calculated and effect of frequency on these parameters of Al/Al2O3/p-Si SBDs was discussed. Variations in these parameters at low frequencies were associated with the effect of interface states in low frequency region. Besides dielectric parameters, ac electrical conductivity of these SBDs was also investigated. (C) 2014 American Vacuum Society.en10.1116/1.4870593info:eu-repo/semantics/closedAccessArticle323WOS:000335965300024Q2Q1