Gökçen, Muharrem2020-05-012020-05-0120130361-52351543-186Xhttps://doi.org/10.1007/s11664-012-2332-yhttps://hdl.handle.net/20.500.12684/5577Gokcen, Muharrem/0000-0001-9063-3028;WOS: 000312660100014The voltage (V) and frequency (f) dependence of dielectric parameters such as the dielectric constant (epsilon'), dielectric loss (epsilon aEuro(3)), dielectric loss tangent (tan delta), real and imaginary parts of electrical modulus (M' and MaEuro(3)), and alternating-current (AC) electrical conductivity (sigma (AC)) of Au/PVA (cobalt-doped)/n-Si structures have been investigated by using experimental admittance measurements conducted at room temperature. The values of epsilon', epsilon aEuro(3), and tan delta were found to be strong functions of voltage and frequency, especially at low frequencies in the positive voltage region. It was observed that the values of epsilon' and epsilon aEuro(3) increase as the frequency decreases. The M' values increase with increasing frequency due to increasing dielectric relaxation, while MaEuro(3) values, in general, remain stable as frequency is changed. The sigma (AC) values at each bias voltage increase with increasing frequency.en10.1007/s11664-012-2332-yinfo:eu-repo/semantics/closedAccessOrganic PVA layerMPS structuresdielectric propertieselectric modulusAC electrical conductivityArticle421103108WOS:000312660100014Q3Q2