Kırkbınar, Mineİbrahimoğlu, ErhanDemir, AhmetÇalışkan, FatihAltındal, Şemsettin2023-07-262023-07-2620230957-4522https://doi.org/10.1007/s10854-022-09515-9https://hdl.handle.net/20.500.12684/12593In this study, zinc oxide nanoparticles (ZnO-NPs) were synthesized by green and chemically using the sol–gel method. They compared in terms of current–voltage (I–V) characteristics. The synthesized plant-based (ZnO-NPs) were characterized via Fourier-transform infrared-spectroscopy, X-ray diffraction (XRD), and field-emission scanning electron microscopy. The XRD analysis determined the existence of pure-crystalline of (ZnO-NPs). Particle size distribution was routinely employed to characterize the green synthesized powders for size distribution, and the reactivity of green synthesized particles was found smaller than chemically synthesized particles. The I–V measurements of prepared thin films characteristics were compared both in the dark and ultraviolet spectrum (365 nm) under 100 mW/cm2. While the reverse-saturation current (I0), ideality factor (n), and zero-bias barrier-height (?bo) values were extracted from the I–V data as 1.68 × 10–6 A, 2.43, 0.61 eV in dark and 7.27 × 10–5 A, 5.64, 0.50 eV under illumination for Al/(Bio-ZnO)/pSi and 7.99 × 10–6 A, 3.75, 0.57 eV in dark and 3.09 × 10–5 A, 5.71, 0.53 eV under illumination for Al/(Chemical-ZnO)/pSi photodiodes. These photodiodes' energy-dependent profiles were also obtained using the Card-Rhoderick method. © 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.en10.1007/s10854-022-09515-9info:eu-repo/semantics/closedAccessField emission microscopesFourier transform infrared spectroscopyII-VI semiconductorsParticle sizeParticle size analysisScanning electron microscopySize distributionSolsSynthesis (chemical)Ultraviolet spectroscopyX ray diffractionZinc oxideCurrent-voltageFlower extractsGreen synthesisPhotoelectric propertySol- gel methodsSynthesis methodSynthesisedSynthesized particlesZinc oxide nanoparticlesZnO/p-SiPhotodiodesArticle3432-s2.0-85146817705WOS:000919733900001Q2Q2