Cadirci, Musa2021-12-012021-12-0120200022-23131872-7883https://doi.org/10.1016/j.jlumin.2020.117551https://hdl.handle.net/20.500.12684/10135Temperature-dependant photoluminescence (PL) properties of CdSe/CdTe quasi-Type-II QDs are studied using steady-state PL spectroscopy. It is observed that the PL intensity decreased as the temperature increased due to non-radiative thermal escapes and surface trap relaxations. The inverse relationship between PL peak energy and the temperature is ascribed to the exciton-phonon coupling and lattice deformation potential. The existence of surface trap relaxation and exciton-phonon coupling are further confirmed with the direct relationship between PL linewidth and temperature up to a certain point. A second peak, which has temperature-dependant properties, is observed at higher energies and it is attributed to the formation of CdTe core during shell growth process.en10.1016/j.jlumin.2020.117551info:eu-repo/semantics/closedAccessTemperaturePhotoluminescenceColloidal quantum dotsCore/shell structureCdteCdseEfficiencyArticle2282-s2.0-85089655574WOS:000579805300054Q2Q1