Gökçen, MuharremTunç, TuncayAltındal, ŞemsettinUslu, İbrahim2020-05-012020-05-0120120921-51071873-4944https://doi.org/10.1016/j.mseb.2012.01.004https://hdl.handle.net/20.500.12684/5904Gokcen, Muharrem/0000-0001-9063-3028; Tunc, Tuncay/0000-0002-3576-2633; Fen Bilgisi Egitimi, Aksaray Egitim/0000-0001-8976-571XWOS: 000303084100004In this work, we investigate the some main electrical and photocurrent properties of the Au/PVA(Co-doped)/n-Si diodes by using current-voltage (I-V) measurements at dark and various illumination intensity. Two types of diodes with and without polyvinyl alcohol (PVA) (Co-doped) polymeric interfacial layer were fabricated and measured at room temperature. Results show that the polymeric interfacial layers and series resistance (R-s) strongly affect the main electrical parameters of these structures. Also, metal/polymer/semiconductor (MPS) diode with PVA (Co-doped) interfacial organic layer is very sensitive to the light such that the current in reverse bias region increase by 10(3)-10(4) times with the increasing illumination intensity. The open circuit voltage V-oc and short-circuit current I-sc values of this MPS diode under 100 mW/cm(2) illumination intensity were found as 0.28 V and 19.3 mu A, respectively. (C) 2012 Elsevier B.V. All rights reserved.en10.1016/j.mseb.2012.01.004info:eu-repo/semantics/closedAccessPhotoconductive diodesCo doped PVAMetal-polymer-semiconductor (MPS)Series resistance effectArticle1775416420WOS:000303084100004Q2Q2