Yıldırım, MertGökçen, Muharrem2020-04-302020-04-3020140250-47070973-7669https://doi.org/10.1007/s12034-014-0649-2https://hdl.handle.net/20.500.12684/2326Gokcen, Muharrem/0000-0001-9063-3028; YILDIRIM, Mert/0000-0002-8526-1802WOS: 000336899800011Present study focuses on the effects of interfacial ferroelectric BTO layer on the electrical characteristics of Au/n-Si structures, hence Au/n-Si (MS) and Au/BTO/n-Si (MFS) structures were fabricated and admittance measurements (capacitance-voltage: C-V and conductance-voltage: G/omega-V) of both structures were conducted between 10 kHz and 1MHz at room temperature. Results showed that C-V and G/omega-V characteristics were affected not only by frequency but also through deposition of BTO layer. Some effects can be listed as sharper peaks in C-V plots, higher capacitance and conductance values. Structure's series resistance (R-s) also decreased due to BTO layer. Interface states (N-ss) profiles of the structures were obtained using Hill-Coleman and high-low frequency capacitance (C-HF-C-LF). Some of the main electrical parameters were extracted from C-2-V plots using depletion capacitance approach. Furthermore, current-voltage characteristics of MS and MFS structures were presented.en10.1007/s12034-014-0649-2info:eu-repo/semantics/openAccessMetal-ferroelectric-semiconductor (MFS) structuresBi4Ti3O12 (BTO)series resistanceinterface statesArticle372257262WOS:000336899800011Q3Q3