Gürsel, ÜmitGökçen, MuharremAllı, Abdulkadir2020-04-302020-04-3020180254-05841879-3312https://doi.org/10.1016/j.matchemphys.2018.03.081https://hdl.handle.net/20.500.12684/3313Gokcen, Muharrem/0000-0001-9063-3028WOS: 000433648600001Poly (linolenic acid)-g-poly (caprolactone)-g-poly (t-butyl acrylate) (PLiIPCLPtBA) graft copolymer was used as an interfacial layer in Au/n-Si Schottky diode. The novel PLiIPCLPtBA layer was coated on n-Si single crystal wafer through an electrospinning system. Nanofiber characteristics of the PLiIPCLPtBA layer was obtained by a Field Emission Scanning Electron Microscope (FEG-SEM). The current-voltage (I-V) measurements of these AO-Si diodes with and without polymeric layer were conducted in dark and under various illumination intensity levels (halogen lamp) at room temperature. Main electrical parameters such as series resistance (R-s), shunt resistance (R-sh), ideality factor (n), reverse saturation current (I-o), zero-bias barrier height (Phi(bo)) and interface state density (N-ss) of the structures were extracted from forward-bias I-V data. (C) 2018 Elsevier B.V. All rights reserved.en10.1016/j.matchemphys.2018.03.081info:eu-repo/semantics/closedAccessGraft copolymerCurrent measurementsResistanceSchottky diodesArticle21315WOS:000433648600001Q1Q2