Gökçen, MuharremTunç, TuncayAltındal, ŞemsettinUslu, İbrahim2020-04-302020-04-3020121567-17391878-1675https://doi.org/10.1016/j.cap.2011.08.012https://hdl.handle.net/20.500.12684/4899Tunc, Tuncay/0000-0002-3576-2633; Gokcen, Muharrem/0000-0001-9063-3028; Fen Bilgisi Egitimi, Aksaray Egitim/0000-0001-8976-571X;WOS: 000297003600031Two types of Schottky Barrier Diodes (SBDs) with and without PVA (Bi2O3-doped) polymeric interfacial layer, were fabricated and measured at room temperature in order to investigate the effects of the PVA (Bi2O3-doped) interfacial layer on the main electrical parameters such as the ideality factor (n), zero-bias barrier height (Phi(B0)), series resistance (R-s) and interface-state density (N-ss). Electrical parameters of these two diodes were calculated from the current-voltage (I-V) characteristics and compared with each other. The values of Phi(B0), n and R-s for SBDs without polymeric interfacial layer are 0.71 eV, 1.44 and 4775 Omega, respectively. The values of Phi(B0), n and R-s for SBDs with PVA (Bi2O3-doped) polymeric interfacial layer are 0.74 eV, 3.49 and 10,030 Omega, respectively. For two SBDs, the energy density distribution profiles of interface states (N-ss) were obtained from forward-bias I-V measurements by taking the bias dependence of R-s of these devices into account. The values of N-ss obtained for the SBD with PVA (Bi2O3-doped) polymeric interfacial layer are smaller than those of the SBD without polymeric interfacial layer. (C) 2011 Elsevier B.V. All rights reserved.en10.1016/j.cap.2011.08.012info:eu-repo/semantics/closedAccessBi2O3-doped PVAMetal-polymer-semiconductor (MPS)Series resistance effectI-V characteristicsArticle122525530WOS:000297003600031Q2Q2