Durmuş, HaziretTataroğlu, AdemAltındal, ŞemsettinYıldırım, Mert2023-07-262023-07-2620221567-17391878-1675https://doi.org/10.1016/j.cap.2022.09.015https://hdl.handle.net/20.500.12684/12930Schottky diodes still attract researchers as they are used in various device applications. This study provides I-V characteristics of Ti/n-GaAs (80-300 K). Higher barrier height (phi B0) values were obtained for higher tempera-tures, whereas the ideality factor exhibited the opposite behavior. This was associated with a barrier in -homogeneity at the Ti/GaAs interface, which has a Gaussian distribution (GD). The mean barrier height values calculated from the modified Richardson and phi B0 -q/2 kT plots were found to be 0.584 eV and 0.575 eV in the temperature range of 80-160 K. They were found as 1.041 eV and 1.033 eV between 180 K and 300 K, respectively. The modified Richardson constant value, on the other hand, was calculated as 22.06 A cm-2 K-2 (80-160 K) and 13.167 A cm-2 K-2 (180-300 K). These values are higher than the theoretical value for n-GaAs, which is 8.16 A cm-2 K-2. This difference may stem from intense inhomogeneity at the Ti/n-GaAs interface.en10.1016/j.cap.2022.09.015info:eu-repo/semantics/closedAccessSchottky Diode; Temperature Effect; Ideality Factor; Barrier Inhomogeneities; Series Resistance; Gaussian Distribution; Semiconductor?S Forbidden Band Gap [4]I-V-T; Conduction MechanismsArticle4485892-s2.0-85139290174WOS:000869486600003Q2Q3