Çulcu, HayatGökçen, MuharremAllı, AbdulkadirAllı, Sema2020-05-012020-05-0120170022-36971879-2553https://doi.org/10.1016/j.jpcs.2016.12.028https://hdl.handle.net/20.500.12684/5437Gokcen, Muharrem/0000-0001-9063-3028WOS: 000393935000028Au/poly (linoleic acid)-g-poly(methyl methacrylate)(PLiMMA)/n-Si diode was fabricated and current-voltage (I-V) characteristics of this diode were measured in dark and under 365 nm ultra violet (UV) irradiation at room temperature. Main electrical parameters; such as leakage current (I-o) factor (n), zero-bias barrier height ((Phi B-o)) and surface states density (N-ss) were calculated using thermionic emission theory to obtain UV irradiation intensity dependence of these parameters. Also alternatively n, barrier height ((Phi(B))) and series resistance (Re) was calculated by Cheung & Cheung method. These alternatively obtained values were given and compared with the literature.en10.1016/j.jpcs.2016.12.028info:eu-repo/semantics/closedAccessSchottky diodeGraft copolymerElectrical propertiesUV irradiationSurface states densityArticle103197200WOS:000393935000028Q2Q2