Ibrahimoglu, ErhanDemir, AhmetCaliskan, FatihTatli, Zafer2025-10-112025-10-1120241293-25581873-3085https://doi.org/10.1016/j.solidstatesciences.2024.107754https://hdl.handle.net/20.500.12684/21927The study focused on the effect of alpha-Si3N4 doping on the electrical/dielectric properties of ZnO thin films. Both alpha-Si3N4 doped and additive-free ZnO thin films were coated on p-Si substrates via a spray deposition method to achieve this. The electrical (current density (J)-voltage (V)) and dielectric properties (capacitance (C), conductance (G), dielectric loss (tan delta), reel/imaginary part of dielectric permittivity (epsilon ' and epsilon '') and electric modulus (M ' and M '')) were determined for all samples by using dielectric spectroscopy (DS) method. On the other hand, scanning electron microscopy (FESEM) and energy-dispersive spectroscopy (EDS) analysis were performed to evaluate microstructure, X-ray diffraction (XRD) was used to define chemical composition and atomic-force microscopy (AFM) analysis was carried out to characterise the topology of the coating layers. The thickness/surface roughness was obtained as similar to 82.5 nm/10.6 nm for undoped and- 99.5 nm/10.4 nm for nitride-doped samples, respectively. The maximum capacitance value (C) was obtained as 275 pF at -3.0V and 200 Hz, and the optimal conductance (G) value was also found as 45 mu S around 4.0V and 1 MHz in the nitride-doped sample. The average of alpha and tau values was calculated as 5.67 x 10(-5) s, 0.146 and 4.49 x 10(-5) s, 0.081 for nitride-doped and undoped ZnO, respectively. The increase in performance can be attributed to the homogeneous and almost equally-size distribution of the ZnO grain growth which is strongly controlled by alpha-Si3N4.en10.1016/j.solidstatesciences.2024.107754info:eu-repo/semantics/closedAccessalpha-Si3N4n-ZnODielectric propertiesSpray depositionFrequencyVoltageArticle1582-s2.0-85208289402WOS:001356588400001Q1Q1