Demir, Gulcin ErsozYucedag, Ibrahim2021-12-012021-12-0120210218-625X1793-6667https://doi.org/10.1142/S0218625X21500360https://hdl.handle.net/20.500.12684/10359In this study, Au-4H-n-SiC metal-semiconductor (MS) and Au-Al2O3-4H-n-SiC metal-insulator-semiconductor (MIS) devices were fabricated to examine the effects on the performance of electronic devices of interfacial insulating materials. In order to determine the dielectric properties, capacitance/conductance-voltage (C/G-V) measurements were realized in a wide range of voltages (-3.0 V)-(11.0 V). Current-voltage (I-V) measurements to obtain the electric properties were realized at +/- 2:5V. Moreover, both the energy distributions of surface states (N-ss) and series resistance (R-s) were obtained from the C/G-V data. Obtained results provided that series resistance originating from interfacial layer (Al2O3) was more effective on the I-V and C/G-V characteristics which must be taken into account in the calculation of main electrical parameters. The rectification ratio (RR) and shunt resistance (R-sh) of the MIS device were almost 10(3) times greater than those of the MS structure. Using Al2O3 between Au and 4H-n-SiC also led to an increase in the value of barrier height (BH) and a decrease in the value of ideality factor (n). These results confirmed that Al2O3 layer leads to an increase in the performance of MS device with respect to low values of N-ss, reverse saturation current (I-0) and n and high values of RR, R-sh and BH.en10.1142/S0218625X21500360info:eu-repo/semantics/closedAccessAl2O3 interfacial insulator layercomparison of MS and MIS devicesvoltage and frequency dependence of surface states and series resistance (R-s)Dielectric-PropertiesAu/N-SiTransport MechanismsSchottkyBehaviorPassivationFabricationLayerOxideArticle2852-s2.0-85101978970WOS:000652587800002Q3Q4