Özmen, Özge TüzünYağlıoğlu, E.2020-05-012020-05-0120141369-80011873-4081https://doi.org/10.1016/j.mssp.2014.04.013https://hdl.handle.net/20.500.12684/5903WOS: 000344823400062In this study, a gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/n-type silicon (Au/P3HT:PCBM/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) was fabricated. To accomplish this, a spin-coating system and a thermal evaporation were used for preparation of a P3HT/PCBM layer system and for deposition of metal contacts, respectively. The forward- and reverse-bias current-voltage (I-V) characteristics of the MPS SBD at room temperature were studied to investigate its main electrical parameters such as ideality factor (n), barrier height (phi(B)), series resistance (R-s), shunt resistance (R-sh), and density of interface states (N-ss). The I-V characteristics have nonlinear behavior due to the effect of R-s, resulting in an n value (3.09) larger than unity. Additionally, it was found that n, phi(B), R-s, R-sh, and N-ss have strong correlation with the applied bias. All results suggest that the P3HT/PCBM interfacial organic layer affects the Au/P3HT:PCBM/n-Si MPS SBD, and that R-s and N-ss are the main electrical parameters that affect the Au/P3HT:PCBM/n-Si MPS SBD. Furthermore, a lower N-ss compared with that of other types of MPS SBDs in the literature was achieved by using the P3HT/PCBM layer. This lowering shows that high-quality electronic and optoelectronic devices may be fabricated by using the Au/P3HT:PCBM/n-Si MPS SBD. (C) 2014 Elsevier Ltd. All rights reserved.en10.1016/j.mssp.2014.04.013info:eu-repo/semantics/closedAccessP3HT/PCBM organic-blend layerSchottky barrier diodesI-V characteristicsArticle26448454WOS:000344823400062Q1Q2