Gökçen, Muharrem2020-04-302020-04-3020151555-130X1555-1318https://doi.org/10.1166/jno.2015.1766https://hdl.handle.net/20.500.12684/3278Gokcen, Muharrem/0000-0001-9063-3028WOS: 000358931600004The effects of illumination on electrical and photocurrent properties of Au/n-Si structures with and without Bi4Ti3O12 interfacial ferroelectric layer were investigated using current-voltage (I-V) and admittance measurements (C-V, G/omega-V). For this purpose, Au/n-Si metal-semiconductor (MS) and Au/Bi4Ti3O12/n-Si metal-ferroelectric-semiconductor (MFS) structures were fabricated and measured at dark and under various illumination intensity levels at room temperature. It was found that the ferroelectric interfacial layer increased the rectifying ratio by decreasing the leakage current and passivated the interface states. Furthermore, the photocurrent of MFS structure is more sensitive to illumination compared with that of MS structure, whereas the situation is opposite for interface states.en10.1166/jno.2015.1766info:eu-repo/semantics/closedAccessFerroelectricMFS StructuresCurrent-VoltagePhotocurrentInterface StatesArticle103309313WOS:000358931600004N/AQ3