Demir, Gülçin ErsözYücedağ, İbrahimKalandaragh, Yashar AzizianOrak, İkramAltındal, Şemsettin2020-04-302020-04-3020160018-93831557-9646https://doi.org/10.1109/TED.2016.2566813https://hdl.handle.net/20.500.12684/3439WOS: 000378607100048The cadmium sulfide (CdS) nanopowders have been prepared by ball-milling method, and CdS-polyvinyl alcohol (PVA) nanocompound in the form of film has been deposited on a p-Si wafer as an interfacial layer by spin-coating method. The impedance characteristics of the fabricated Al/CdS-PVA/p-Si (metal-polymer-semiconductor)-type structures were studied in the frequency and voltage range of 5 kHz-5 MHz and +/-1 V, respectively, by considering interface states (D-it), series resistance (R-s), and interfacial layer effects at 300 K. While the voltage and frequency dependence profiles of D-it were evaluated from the low-high frequency capacitance (C-LF-C-HF) and Hill-Coleman methods, R-s profiles were evaluated from the Nicollian and Brews method. Doping concentration atoms (N-A) and barrier height [Phi (B)(capacitance-voltage (C-V))] values were also obtained from the reverse bias C-2 versus V plots for each frequency. While D-it and R-s values decrease with increasing frequency almost exponentially, Phi (B)(C-V) increases linearly. Therefore, both the measured capacitance (C-m) and conductance (G(m)/omega) values were corrected to eliminate the R-s effect. The experimental results show that R-s value is more effective on the impedance measurements at high frequencies in the accumulation region, but D-it is effective at low frequencies in the depletion region.en10.1109/TED.2016.2566813info:eu-repo/semantics/closedAccessAl/cadmium sulfide (CdS)-polyvinyl alcohol (PVA)/p-Si [metal-polymer-semiconductor (MPS)]-type structureselectrical characteristicsimpedance measurementsinterface traps (D-it) or surface states (N-ss)series resistanceArticle63729482955WOS:000378607100048Q2Q2