Kirkbinar, MineIbrahimoglu, ErhanDemir, AhmetCaliskan, Fatih2025-10-112025-10-1120240921-51071873-4944https://doi.org/10.1016/j.mseb.2024.117722https://hdl.handle.net/20.500.12684/21946The study focused on the relaxation and polarisation mechanisms of Al/(rGO:ZnO core-shell)/pSi/Al MOS structures. For this purpose, the rGO:ZnO core-shell structures were synthesised by sol-gel procedures and coated on pSi by spin-coating. The structures were characterized as chemical, morphological and micro-structural using FESEM-EDS, AFM, XRD and Raman analysis. Additionally, the capacitance (C), conductance (G/omega), dielectric permittivity (epsilon ' and epsilon ''), loss factor(tan delta), electric modulus(M ' and M '') of the samples were successfully examined by DS over the wide range of frequencies (100 Hz-1 MHz) for determining dielectric parameters. Three distinct regions were visible on the C-V and C-omega plots: accumulation (-4 to 0 V), depletion (0 to 2 V), and inversion (2 to 4 V). Two relaxation times (10(-4)s-10(-7)s) were obtained in epsilon '-V and epsilon '-omega graphs between 1-100 kHz (region 1) and 100 kHz-1 MHz (region 2). The relaxation times were according to the Maxwell-Wagner and dipolar polarisation mechanism. As a result, the capacitive effect was observed and the equivalent RC circuit obtained from the Cole-Cole diagrams allowed the samples to be used in energy storage or different electronic applications.en10.1016/j.mseb.2024.117722info:eu-repo/semantics/closedAccessReduced graphene oxideCore-shell structuresDielectric propertiesMOS devicesArticle3102-s2.0-85204534915WOS:001322459800001Q1Q2