Ocaya, Richard O.Al-Sehemi, Abdullah G.Tataroglu, AdemDere, AysegulErol, IbrahimAksu, MecitAl-Ghamdi, Ahmed A.2024-08-232024-08-2320230921-45261873-2135https://doi.org/10.1016/j.physb.2023.415111https://hdl.handle.net/20.500.12684/14278This study investigates the fabrication and performance analysis of Al/CuO:LaB6/p-Si/Al diodes with CuO-doped LaB6 interlayer films of varying concentrations (1%, 5%, and 10%). Experimental evidence demonstrates the limitations of 0% CuO doping, as pure LaB6 lacks a significant barrier height, resulting in ohmic behavior unsuitable for intended applications. Through comprehensive analyses under varying illuminations (20-100 mW/cm2) and frequencies (10 kHz-1 MHz), the study reveals that controlling CuO doping in LaB6 significantly enhances the effective barrier height at the LaB6:CuO heterojunction, improving rectification properties. This enhancement enables the diode to be well-suited for high-speed photonic devices utilizing one-step photoemission. The findings contribute to the development of high-performance LaB6-based devices, advancing photonic technologies by emphasizing the advantages of CuO doping.en10.1016/j.physb.2023.415111info:eu-repo/semantics/openAccessOne-step photoemissionCopper oxide (CuO)Lanthanum hexaboride (LaB6)Photonic deviceTransient responseFrequency effectSi Schottky DiodesSeries ResistanceInterface StatesElectron SourceField-EmissionThin-FilmsSurfaceArticle6662-s2.0-85166019929WOS:001055396500001Q2Q2