Kırkbınar, MineDemir, AhmetAltındal, ŞemsettinÇalışkan, Fatih2023-07-262023-07-2620220925-96351879-0062https://doi.org/10.1016/j.diamond.2022.109435https://hdl.handle.net/20.500.12684/12777In the study, core-shell-structured Al/(ZnO:rGO)/pSi/Al photo-diodes were successfully fabricated using a sol-gel spin-coating method by varying the concentration of reduced-graphene oxide (rGO) from 1 % to 9 % (wt). The ZnO:rGO composite solution was coated on a silicon (p-Si) wafer at 1000 rpm and 300 K. Both aluminum back-ohmic and front-rectifier contacts were performed on the p-Si wafer by physical-vapor-deposition (PVD). The morphological and chemical structure of the photo-diodes were determined by using field-emission scanning electron microscopy (FE-SEM), energy dispersive spectrometry (EDS), and X-ray diffraction (XRD). The current -voltage (I-V) analysis in dark and under ultraviolet (UV, 365 nm) wavelength was utilized in detail. Basic electrical parameters, including the ideality factor (n), barrier height (BH) and series-shunt resistances (Rs, Rsh), were calculated using a variety of methods and compared to each other. The Card-Rhoderick method was used to extract energy-dependent profiles of interface traps (Nss). The core-shell-structured (ZnO-7 % rGO) photo-diode exhibited the best photocatalytic performance both in dark and under various illumination intensities (50-250 mW/cm2). The ZnO:rGO interlayer at the metal-semiconductor (M/S) interface leads to improvement of the photo-diode in respect of low-ideality factor/Nss/leakage-current and high-rectification and BH.en10.1016/j.diamond.2022.109435info:eu-repo/semantics/closedAccessZno; Rgo Core-Shell Structure; Thin Film Coatings; Photoelectric PropertiesGraphene Oxide; Electrical Characteristics; Assisted Synthesis; Charge Separation; Interfacial Layer; Schottky Diode; Photoluminescence; Nanoparticles; Fabrication; NanocompositeArticle1302-s2.0-85140137593WOS:000880001100004Q2Q2