Gökçen, MuharremTaran, Songül2020-05-012020-05-0120190026-2714https://doi.org/10.1016/j.microrel.2019.06.004https://hdl.handle.net/20.500.12684/5631Taran, Songul/0000-0001-8115-2169WOS: 000496833600015The main electrical parameters and current conduction mechanisms of Au/Poly (linoleic acid)-g-poly (methyl methacrylate)/n-Si diode were carried out in the range of 300 K-400 K with a temperature increment of 10 K. Two distinct linear regions were observed in semi-logarithmic current-voltage (I-V) plots for each investigated temperature. For each linear region, leakage currents, barrier heights and ideality factors which are main electrical parameters of the diode were extracted from the experimental I-V measurements. Also, interface state density was derived by Card and Rhoderick's function. To obtain effective current conduction mechanisms, lnI versus lnV plots were obtained by taking into account of double linear region of current-voltage plots and abnormal increasing of barrier height and ideality factor at above the room temperature.en10.1016/j.microrel.2019.06.004info:eu-repo/semantics/closedAccessSchottky diodeGraft copolymerBarrier heightTemperature effectGaussian distributionArticle99132136WOS:000496833600015Q2Q3