Yalva, ElifLatifoglu, Mustafa A.Al-Otaify, AliElhag, Ahmed FaisalCadirci, Musa2025-10-112025-10-1120250925-83881873-4669https://doi.org/10.1016/j.jallcom.2025.178911https://hdl.handle.net/20.500.12684/21964Doped metal halide perovskite quantum dots (PQDs) have attracted significant attention due to their unique properties, to be applied in potential fields such as energy and optoelectronics. In this study, we investigate the influence of Zn on the structures of both CsPb(Cl/Br)3 and CsPb(Br/I)3 PQDs. The first principle calculations show that Zn doping creates an indirect band gap in the structures and increases the structures' dielectric constant. The experimental results show that Zn doping increases the durability of PQDs against both time and UV light exposure and decreases the probability of nonradiative recombination. In addition, thermal expansion and exciton redistribution mechanisms are observed in Zn doped CsPb(Cl/Br)3 PQDs, whereas, a blue-shifted concentration dependant photoluminescence spectra is observed in CsPb(Br/I)3 PQDs. This study provides insights into the effect of Zn doping on the structures of halide perovskite PQDs and offers new potentials for exploiting Zn-doped perovskite PQDs' unique properties in numerous applications.en10.1016/j.jallcom.2025.178911info:eu-repo/semantics/closedAccessPerovskitePhotoluminescenceZn DopingQuantum dotsArticle10162-s2.0-85216691865WOS:001422874600001Q1Q1