Gökçen, MuharremYıldırım, Mert2020-04-302020-04-3020121674-10561741-4199https://doi.org/10.1088/1674-1056/21/12/128502https://hdl.handle.net/20.500.12684/3480YILDIRIM, Mert/0000-0002-8526-1802; Gokcen, Muharrem/0000-0001-9063-3028WOS: 000314221400083A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current-voltage (I-V) characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by the thermionic emission (TE) theory. Zero-bias barrier height (Phi(B0)) and ideality factor (n) calculated from I-V characteristics, are found to be temperature-dependent such that Phi(B0) increases with temperature increasing, whereas n decreases. The obtained temperature dependence of Phi(B0) and linearity in Phi(B0) versus the n plot, together with a lower barrier height and Richardson constant values obtained from the Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Gaussian distribution of barrier height.en10.1088/1674-1056/21/12/128502info:eu-repo/semantics/closedAccessBi4Ti3O12I-V characterizationtemperature dependenceGaussian distributionArticle2112WOS:000314221400083Q3Q3