Koç, Nevin SoyluAltıntaş, Sevgi PolatGökçen, MuharremDoğruer, MusaAltuğ, CevherVarilci, Ahmet2023-07-262023-07-2620220924-42471873-3069https://doi.org/10.1016/j.sna.2022.113618https://hdl.handle.net/20.500.12684/12575In/ZnO/p-Si heterojunction diode was produced to investigate the photo-responsivity and electrical features under ultraviolet (UV) light. A hydrothermal synthesis technique was used to coat the ZnO layer on the p-Si single crystal as nanowhisker/rods. The formation of surface and nanowhisker properties of the ZnO layer were investigated by scanning electron microscope (SEM). The I-V (current-voltage) analysis of the In/ZnO/p-Si diode was realized in dark and under UV (290-400 nm) illumination. Further, the main electrical parameters of the diode; such as reverse bias saturation current (I-V), ideality factor (n), zero bias barrier height (Phi(Bo)), resistance (R) and interface state density (N-ss) were obtained from the experimental I-V measurements by thermionic emission (TE) and Card and Rhoderick's function. Also, the power law of the photocurrents (I-PC), photoresponsivity (PR) and response time were extracted. Photo-responsivity and response time values of In/ZnO/p-Si heterojunction diode were obtained as 2.0 A/W and (rise/decay) 160/200 ms, respectively.en10.1016/j.sna.2022.113618info:eu-repo/semantics/closedAccessZno Nanorod/Whisker; Photodiode; Uv Illumination; P-Si/Zno; Photo-ResponsivityThin-Film; Si; Photodegradation; Diode; DarkArticle3422-s2.0-85130562238WOS:000807773200005Q1Q1